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AS5SP1M18DQ Datasheet(PDF) 4 Page - Austin Semiconductor

Part No. AS5SP1M18DQ
Description  Plastic Encapsulated Microcircuit 18Mb, 1M x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
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Maker  AUSTIN [Austin Semiconductor]
Homepage  http://www.austinsemiconductor.com
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AS5SP1M18DQ Datasheet(HTML) 4 Page - Austin Semiconductor

 
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AS5SP1M18DQ
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
Revision 1.0 04/04/04
For Additional Products and Information visit out Web site at
www.austinsemiconductor.com
4
COTS PEM
AS5SP1M18DQ
Austin Semiconductor, Inc.
SSRAM
Linear Burst
Burst Control
State
Case 1
Case 2
Case 3
Case 4
Pin [MODE]
LOW
A1A0A1A0A1A0A1A0
First Address
000110
11
011011
00
101100
01
Fourth Address
110001
10
Synchronous Truth Tables
Burst Sequence Tables
Write Table
Absolute Maximum Ratings*
*Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum conditions for any duration or segment of time may affect
device reliability.
Capacitance
Asynchronous Truth Table
AC Test Loads
CE1\
CE2
CE3\
ADSP\
ADSC\
ADV
WT / RD
CLK
Address Accessed
Operation
H
X
X
X
L
X
X
NA
Not Selected
L
L
X
L
X
X
X
NA
Not Selected
L
X
H
L
X
X
X
NA
Not Selected
L
L
X
X
L
X
X
NA
Not Selected
L
X
H
X
L
X
X
NA
Not Selected
L
H
L
L
X
X
X
External Address
Begin Burst, READ
L
H
L
H
L
X
WT
External Address
Begin Burst, WRITE
L
H
L
H
L
X
RD
External Address
Begin Burst, READ
X
X
X
H
H
L
RD
Next Address
Continue Burst, READ
H
X
X
X
H
L
RD
Next Address
Continue Burst, READ
X
X
X
H
H
L
WT
Next Address
Continue Burst, WRITE
H
X
X
X
H
L
WT
Next Address
Continue Burst, WRITE
X
X
X
H
H
H
RD
Current Address
Suspend Burst, READ
H
X
X
X
H
H
RD
Current Address
Suspend Burst, READ
X
X
X
H
H
H
WT
Current Address
Suspend Burst, WRITE
H
X
X
X
H
H
WT
Current Address
Suspend Burst, WRITE
Notes:
1. X = Don’t Care
2. W T= W RITE operation in W RITE TABLE, RD= READ operation in WRITE TABLE
GW\
BW\
BWa\
BWb\
BWc\
BWd\
Operation
HHX
X
X
X
READ
H
L
H
H
H
H
READ
H
L
L
H
H
H
WRITE Byte [A]
HL
HL
H
H
WRITE Byte [B]
H
L
H
H
L
L
WRITE Byte [C], [D]
H
L
L
L
L
L
WRITE ALL Bytes
L
X
X
X
X
X
WRITE ALL Bytes
Parameter
Symbol
Min.
Max.
Units
Voltage on VDD Pin
VDD
-0.3
4.6
V
Voltage on VDDQ Pins
VDDQ
VDD
V
Voltage on Input Pins
VIN
-0.3
VDD+0.3
V
Voltage on I/O Pins
VIO
-0.3
VDDQ+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
tSTG
-65
150
οC
Operating Temperatures
/CT
070
οC
[Screening Levels]
/IT
-40
85
οC
/ET
-40
105
οC
/XT
-55
125
οC
Parameter
Symbol
Max.
Units
Input Capacitance
CI
5.0
pF
Input/Output Capacitance
CIO
5.0
pF
Clock Input Capacitance
CCLK
5.0
pF
R= 1538 ohm@2.5v
R= 351 ohm@3.3v
3.3/2.5v
Output
Diagram [B]
5 pF
R= 317 ohm@3.3v
R= 1667 ohm@2.5v
Output
Zo=50 ohm
30 pF
Rt = 50 ohm
Vt= Termination Voltage
Rt= Termination Resistor
Vt= 1.50v for 3.3v VDDQ
Vt= 1.25v for 2.5v VDDQ
Diagram [A]
Operation
ZZ
OE\
I/O Status
Power-Down (SLEEP)
H
X
High-Z
READ
L
L
DQ
LH
High-Z
WRITE
L
X
Din, High-Z
De-Selected
L
X
High-Z
Interleaved Burst
Burst Control
State
Case 1
Case 2
Case 3
Case 4
Pin [MODE]
HIGH
A1
A0
A1
A0
A1
A0
A1
A0
First Address
00011011
01001110
10110001
Fourth Address
11100100


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