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AS5C4009 Datasheet(PDF) 5 Page - Austin Semiconductor

Part No. AS5C4009
Description  512K x 8 SRAM Ultra Low Power SRAM
Download  12 Pages
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Maker  AUSTIN [Austin Semiconductor]
Homepage  http://www.austinsemiconductor.com
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AS5C4009 Datasheet(HTML) 5 Page - Austin Semiconductor

 
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SRAM
SRAM
SRAM
SRAM
SRAM
AS5C4009
AS5C4009
Rev. 5.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 3ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load ......................................... See Figures 1
NOTES
1.
Overshoot: Vcc +3.0V for pulse width < 20ms.
2.
Undershoot: -3V for pulse width < 20ms.
3.
I
CC is dependent on output loading and cycle rates.
4.
This parameter is guaranteed but not tested.
5.
Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6.
At any given temperature and voltage condition,
t
HZCE
is less than
t
LZCE
, and
t
HZWE
is less than
t
LZWE
.
7.
WE\ is HIGH for READ cycle.
8.
Device is continuously selected. Chip enables and
output enables are held in their active state.
9.
Address valid prior to, or coincident with, latest
occurring chip enable.
10. tRC = Read Cycle Time.
11. Chip enable and write enable can initiate and
terminate a WRITE cycle.
12. Output enable (OE\) is inactive (HIGH).
13. Output enable (OE\) is active (LOW).
14. ASI does not warrant functionality nor reliability of
any product in which the junction temperature
exceeds 150°C. Care should be taken to limit power to
acceptable levels.
15. All voltage referenced to Vss (GND).
Fig. 1 Output Load Equivalent
DATA RETENTION ELECTRICAL CHARACTERISTICS
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
NOTES
VCC for Retention Data
VDR
2V
CE\ > (VCC - 0.2V)
VCC = 2V
ICCDR
100
µA
VIN > (VCC - 0.2V)
VCC = 3V
ICCDR
200
µA
Chip Deselect to Data
Retention Time
tCDR
0ns
4
Operation Recovery Time
tR
5
ms
4, 10
Data Retention Current
CONDITIONS
167 ohms
1.73V
C=30pF
Q
C = 100pF
50 ohms


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