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SA09 Datasheet(PDF) 2 Page - Cirrus Logic |
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SA09 Datasheet(HTML) 2 Page - Cirrus Logic |
2 / 7 page P r o d u c t I n n o v a t i o n F r o m SA09 2 SA09U .CHARACTERISTICSANDSPECIFICATIONS ABSOLUTEMAxIMUMRATINGS Parameter Symbol Min Max Units SUPPLY VOLTAGE, +Vs to GND, 10mS surge 60 V SUPPLY VOLTAGE, +V CC to GND 16 V OUTPUT CURRENT, peak 7.5 A POWER DISSIPATION, internal (Note 3) 80 W TEMPERATURE, pin solder, 10s 300 °C TEMPERATURE, junction (Note 1) 150 °C TEMPERATURE, storage −65 150 °C OPERATING TEMPERATURE RANGE, case −55 125 °C INPUTS −0.4 +5.4 V The SA09 is constructed from MOSFET transistors. ESD handling procedures must be observed. The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes. CAUTION ExTERNALCONNECTIONS 8-pinDIP PACKAGESTYLEEL Case tied to Pin 7. Allow no current in case. Bypassing of sup- plies is required. If +PWM > RAMP then A OUT > B OUT. |
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