AGR26180EF datasheet(5/9 Pages) TRIQUINT

Part #	AGR26180EF

Description	180 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET

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Manufacturer	TRIQUINT [TriQuint Semiconductor]

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5 / 9 page

Preliminary Data Sheet

AGR26180EF

May 2004

180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET

Typical Performance Characteristics (continued)

Test conditions:

Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 1700 mA.

Figure 4. Power Gain, Drain Efficiency, ACPR, and IM3 vs. Output Power

Test conditions:

Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, f1 = 2590 MHz, f2 = 2600 MHz, VDD = 28 V, IDQ = 1700 mA, POUT = 27 W.

Figure 5. Power Gain, Drain Efficiency, ACPR, IM3, and IRL vs. Frequency

0

5

10

15

20

25

30

35

1

10

100

POUT (W, AVERAGE)Z

-70

-60

-50

-40

-30

-20

-10

0

(%)

IMD

ACPR

GPS

0

5

10

15

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2520

2550

2580

2610

2640

2670

MHzZ

-48

-40

-32

-24

-16

-8

0

ACP

IMD

GAIN (dB)

RL (dB)

(%)

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