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2N4393 Datasheet(PDF) 6 Page - RHOPOINT COMPONENTS |
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2N4393 Datasheet(HTML) 6 Page - RHOPOINT COMPONENTS |
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6 / 14 page  01/99 B-51 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage – 35 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 360 mW Power Derating 3.27 mW/°C TOÐ226AA Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate Surface Mount SMPJ111, SMPJ112, SMPJ113 At 25°C free air temperature J111 J112 J113 Process NJ132 Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 35 – 35 – 35 V IG = – 1µA, VDS = ØV Gate Reverse Current IGSS – 1– 1– 1 nA VGS = – 15V, VDS = ØV Gate Source Cutoff Voltage VGS(OFF) – 3 – 10 – 1 – 5 – 3 V VDS = 5V, ID = 1 µA Drain Saturation Current (Pulsed) IDSS 20 5 2 mA VDS = 15V, VGS = ØV Drain Cutoff Current ID(OFF) – 1– 1– 1 nA VDS = 15V, VGS = – 10V Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 30 50 100 Ω VGS = ØV, VDS = 0.1V f = 1 kHz Drain Gate Capacitance Cdg 555 pF VDS = ØV, VGS = – 10V f = 1 MHz Source Gate Capacitance Cgs 555 pF VDS = ØV, VGS = – 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 28 28 28 pF VDS = VGS = ØV f = 1 MHz Switching Characteristics Typ Typ Typ Turn ON Delay Time td(on) 777 ns J111 J112 J113 Rise Time tr 662 ns VDD 10 10 10 V Turn OFF Delay Time td(off) 20 20 20 ns VGS(OFF) – 12 – 7 – 5 V Fall Time tf 15 15 15 ns RL 800 1600 3200 Ω ¥ Choppers ¥ Commutators ¥ Analog Switches 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-51 |
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