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FG6000AU-120D Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # FG6000AU-120D
Description  HIGH POWER INVERTER USE PRESS PACK TYPE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FG6000AU-120D Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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Aug.1998
0
5
10
15
20
25
–40
0
40
80
120
160
VD = 24V
RL = 0.1
Ω
IGT
VGT
0
4
6
2
8
0
40
80
120
160
200
tgt
td
IT = 6000A
VD = 3000V
diT/dt = 500A/
µs
diG/dt = 30A/
µs
CS = 6.0
µF
RS = 5.0
Ω
Tj = 125°C
0
2000
4000
6000
8000
10000
12000
14000
16000
0
400
800
1200
1600
2000
0
400
800
1200
1600
2000
90°
120°
180°
θ = 30°
60°
θ
360°
0
20
40
60
80
100
120
140
160
θ
360°
0
2000
4000
6000
8000
10000
12000
14000
16000
0
4000
500 1000 1500 2000 2500 3000 3500
DC
270°
θ = 30°
120°
180°
60°
90°
360°
θ
0
20
40
60
80
100
120
140
160
0
4000
500 1000 1500 2000 2500 3000 3500
θ = 30°
90°
60°
120°
180°
270°
DC
360°
θ
θ = 30° 60°
90° 120° 180°
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT, GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON GATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
DC METHOD
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE


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