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NESG2101M16-A Datasheet(PDF) 2 Page - NEC

Part # NESG2101M16-A
Description  NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NESG2101M16-A Datasheet(HTML) 2 Page - NEC

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ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 15 mA
130
190
260
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 50 mA, f = 2 GHz
14
17
GHz
Insertion Power Gain
⏐S21e2 VCE = 3 V, IC = 50 mA, f = 2 GHz
11.5
13.5
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
0.9
1.2
dB
Noise Figure (2)
NF
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
0.6
dB
Associated Gain (1)
Ga
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
11.0
13.0
dB
Associated Gain (2)
Ga
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
19.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.4
0.5
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 3 V, IC = 50 mA, f = 2 GHz
14.5
17.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3.6 V, IC (set) = 10 mA (RF OFF),
f = 2 GHz, ZS = ZSopt, ZL = ZLopt
21
dBm
Linear Gain
GL
VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
15
dBm
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
Marking
zH
hFE Value
130 to 260
S21
S12
<R>
Data Sheet PU10395EJ03V0DS
2
NESG2101M16


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