2008. 10. 2

1/7

SEMICONDUCTOR

TECHNICAL DATA

KF16N50P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 1

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

Drain-Source ON Resistance :

Qg(typ.)= 40.8nC

MAXIMUM RATING (Tc=25

)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF16N50P

KF16N50F

Drain-Source Voltage

500

V

Gate-Source Voltage

30

V

Drain Current

16

16*

A

9.7

9.7*

Pulsed (Note1)

45

45*

Single Pulsed Avalanche Energy

(Note 2)

870

mJ

Repetitive Avalanche Energy

(Note 1)

22.5

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

225

51

W

Derate above 25

1.78

0.41

W/

Maximum Junction Temperature

150

Storage Temperature Range

-55

150

Thermal Characteristics

Thermal Resistance, Junction-to-Case

0.58

2.43

/W

Thermal Resistance,

Junction-to-Ambient

62.5

62.5

/W

G

D

S

PIN CONNECTION

DIM

MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6

0.2

+

_

+

_

9.9

0.2

+

_

9.2

0.2

+

_

4.5

0.2

+

_

2.4

0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

L

E

I

I

O

C

H

NN

Q

D

Q

P

P

1. GATE

2. DRAIN

3. SOURCE

12

3

1. GATE

2. DRAIN

3. SOURCE

TO-220IS (1)

A

A

B

C

C

D

D

E

E

F

G

H

H

1.47 MAX

1.47 MAX

J

K

L

M

L

N

NN

O

Q

R

R

12

3

M

DIM

MILLIMETERS

10.16

0.2

+

_

15.87

0.2

+

_

2.54

0.2

+

_

0.8

0.1

+

_

3.18

0.1

+

_

0.5

0.1

+

_

3.23

0.1

+

_

13.0

0.5

+

_

2.54

0.2

+

_

4.7

0.2

+

_

6.68

0.2

+

_

2.76

0.2

+

_

3.3

0.1

+

_

12.57

0.2

+

_

KF16N50P

KF16N50F