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CTLM1074-M832D Datasheet(PDF) 2 Page - Central Semiconductor Corp

Part No. CTLM1074-M832D
Description  MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CTLM1074-M832D Datasheet(HTML) 2 Page - Central Semiconductor Corp

   
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Central
Semiconductor Corp.
TM
CTLM1074-M832D
MULTI DISCRETE MODULE
SURFACE MOUNT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY RECTIFIER
R1 (22-July 2008)
ELECTRICAL CHARACTERISTICS Q1 (Continued):
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VCE(SAT)
IC=200mA, IB=20mA
80
150
mV
VCE(SAT)
IC=500mA, IB=50mA
150
250
mV
VCE(SAT)
IC=800mA, IB=80mA
220
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
275
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
15
pF
ELECTRICAL CHARACTERISTICS D1: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR= 5V
10
μA
IR
VR= 8V
20
μA
IR
VR= 15V
50
μA
BVR
IR= 100μA
40
V
VF
IF= 10mA
0.29
V
VF
IF= 100mA
0.36
V
VF
IF= 500mA
0.45
V
VF
IF= 1.0A
0.55
V
CJ
VR= 4.0V, f=1.0MHz
50
pF
TLM832D - MECHANICAL OUTLINE
Suggested mounting pad layout
for maximum power dissipation
(Dimensions in mm)
For standard mounting refer
to TLM832D Package Details
LEAD CODE:
1) BASE Q1
2) EMITTER Q1
3) ANODE D1
4) ANODE D1
5) CATHODE D1
6) CATHODE D1
7) COLLECTOR Q1
8) COLLECTOR Q1
MARKING CODE: CFD


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