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CTLM1074-M832D Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CTLM1074-M832D
Description  MULTI DISCRETE MODULE ??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CTLM1074-M832D Datasheet(HTML) 1 Page - Central Semiconductor Corp

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MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL
UNITS
Power Dissipation*
PD
1.65
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
76
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
1.0
A
Peak Repetitive Forward Current, tp<1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100μA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100μA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
75
mV
CTLM1074-M832D
MULTI DISCRETE MODULE ™
SURFACE MOUNT
LOW VCE (SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY RECTIFIER
TLM832D CASE
Central
Semiconductor Corp.
TM
R1 (22-July 2008)
MARKING CODE:
CFD
TM
Bottom View
Top View
APPLICATIONS
• Switching Circuits
• DC / DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
DESCRIPTION: The Central Semiconductor Corp.
CTLM1074-M832D consists of a Low VCE (SAT) PNP
Transistor and a Low VF Schottky Rectifier. Packaged
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where small
size, operational efficiency, and low energy
consumption are the prime requirements. Due to its
leadless package design this device is capable of
dissipating up to 4 times the power of similar devices in
comparable sized surface mount packages.
FEATURES
• Dual Chip Device
• High Current (1.0A) Transistor and Schottky Rectifier
• Low VCE(SAT) PNP Transistor
(450mV @ IC = 1.0A Max)
• Low VF Schottky Rectifier (550mV @ 1.0A Max)
• High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Device CTLM1034-M832D
*FR-4 Epoxy PCB with copper mounting pad area of 54mm
2


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