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TCFGD1E337MCR Datasheet(PDF) 9 Page - Rohm |
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TCFGD1E337MCR Datasheet(HTML) 9 Page - Rohm |
9 / 13 page TCFG series D Case Tantalum capacitors Rev.D 9/12 Malfunction rate as function of operating Malfunction rate as function of circuit resistance ( /V) temperature and rated voltage 0.01 0.02 0.03 0.06 0.1 0.2 0.3 0.5 1.0 Ratio = Rated Voltage Applied Voltage 1.0 0.7 0.5 0.3 0.1 20 40 60 85 Fig.3 OPERATING TEMPERATURE ( C) 0.4 0.6 0.8 1.0 2.0 4.0 6.0 0.1 0.2 0.6 0.4 3.0 1.0 2.0 RESISTANCE OF CIRCUIT ( Ω / V) Fig.4 (4) External temperature vs. fuse blowout (5) Power vs. fuse blowout characteristics / Product surface temperature 260 270 280 290 300 310 320 330 340 350 360 failed no failed 1 10 100 OPERATING TIME ( s) Fig.5 half failed C case D case 0 10 20 30 40 50 60 70 80 90 100 02 4 6 8 10 9 7 5 3 1 ELECTRIC POWER ( W) Fig.6 150 100 125 175 200 225 250 275 300 325 350 surface temp. curve of the products( °C) operating time(s) C case D case Note: Solder the chip at 300 C or less. If it is soldered using a temperature higher than 300 C, open function built-in may operate. (6) Maximum power dissipation Warming of the capacitor due to ripple voltage balances with warming caused by Joule heating and by radiated heat. Maximum allowable warming of the capacitor is to 5 C above ambient temperature. When warming exceeds 5 C, it can damage the dielectric and cause a short circuit. Power dissipation (P) = I 2 R Ripple current P : As shown in table at right R : Equivalent series resistance Notes: 1. Please be aware that when case size is changed, maximum allowable power dissipation is reduced. 2. Maximum power dissipation varies depending on the package. Be sure to use a case which will keep warming within the limits shown in the table below. |
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Similar Description - TCFGD1E337MCR |
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