NTLUS4195PZ datasheet(3/6 Pages) ONSEMI

Part #	NTLUS4195PZ

Description	Power MOSFET ??0 V, ??.0 A, Cool Single P?묬hannel, ESD, 1.6x1.6x0.55 mm UDFN Package

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NTLUS4195PZ

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

4.0

3.5

3.0

2.0

1.5

1.0

0.5

0

2

4

6

10

14

18

20

3.5

4

3

2.5

2

1.5

1

0

1

2

4

5

6

9

10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−VGS, GATE VOLTAGE (V)

−ID, DRAIN CURRENT (A)

9.0

8.0

10

7.0

6.0

5.0

4.0

3.0

0.050

0.075

0.100

0.125

0.150

0.200

0.225

0.250

16

14

12

8

6

4

2

0

0.025

0.050

0.100

0.125

0.175

0.200

0.250

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

125

100

75

50

25

0

−25

−50

0.6

0.8

0.9

1.1

1.2

1.3

1.4

1.6

20

15

10

5

0

1

10

100

1000

2.5

5.0

8

12

16

VGS = −10 V

−9.0 V

−8.0 V

−5.0 V

−4.5 V

−3.0 V

−3.5 V

−2.5 V

VDS ≤ −10 V

3

7

8

TJ = 25°C

TJ = −55°C

TJ = 125°C

0.175

ID = −3.0 A

TJ = 25°C

10

18

20

0.075

0.150

0.225

TJ = 25°C

VGS = −4.5 V

VGS = −10 V

ID = −3.0 A

150

1.0

1.5

TJ = 85°C

TJ = 150°C

TJ = 125°C

4.5

−4.0 V

−6.0 V

−7.0 V

4.5

5

VGS = −10 V

0.7

VGS = −4.5 V

ID = −2.0 A

30

25

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