NTLUF4189NZ datasheet(2/8 Pages) ONSEMI

Part #	NTLUF4189NZ

Description	Power MOSFET and Schottky Diode 30 V, N?묬hannel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLUF4189NZ

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DEVICE ORDERING INFORMATION

Device

Package

Shipping†

NTLUF4189NZTAG

UDFN6

(Pb−Free)

3000 / Tape & Reel

NTLUF4189NZTBG

UDFN6

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Schottky Diode Maximum Ratings (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Units

Peak Repetitive Reverse Voltage

VRRM

30

V

DC Blocking Voltage

VR

30

V

Average Rectified Forward Current

IF

0.5

A

Thermal Resistance Ratings

Parameter

Symbol

Max

Units

Junction-to-Ambient – Steady State (Note 3)

RθJA

155

°C/W

Junction-to-Ambient – t ≤ 5 s (Note 3)

RθJA

100

Junction-to-Ambient – Steady State min Pad (Note 4)

RθJA

245

MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 μA

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = 250 μA, ref to 25°C

22

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25°C

1.0

mA

TJ = 85°C

10

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ± 8.0 V

10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.4

1.1

1.5

V

Negative Threshold Temp. Coefficient

VGS(TH)/TJ

3.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 1.5 A

145

200

mW

VGS = 3.0 V, ID = 0.5 A

185

250

VGS = 2.5 V, ID = 0.5 A

220

350

Forward Transconductance

gFS

VDS = 4.0 V, ID = 0.15 A

1.1

S

CHARGES & CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = 15 V

95

pF

Output Capacitance

COSS

15

Reverse Transfer Capacitance

CRSS

10

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V;

ID = 1.5 A

1.4

3.0

nC

Threshold Gate Charge

QG(TH)

0.2

Gate-to-Source Charge

QGS

0.4

Gate-to-Drain Charge

QGD

0.4

3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.

5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

6. Switching characteristics are independent of operating junction temperatures

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