NTD4910N-35G datasheet(4/8 Pages) ONSEMI

Part #	NTD4910N-35G

Description	Power MOSFET 30 V, 37 A, Single N?묬hannel, DPAK/IPAK

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NTD4910N

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TYPICAL CHARACTERISTICS

3.2 V

3.4 V

7 V

10 V

4.5

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

4

3

2

1

0

10

20

30

50

60

4.0

3.5

3.0

2.5

2.0

0

20

30

50

60

Figure 3. On−Resistance vs. VGS

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS (V)

ID, DRAIN CURRENT (A)

9.0

8.0

7.0

10

6.0

5.0

4.0

3.0

0.004

0.006

0.008

0.010

0.012

0.016

0.020

55

45

35

25

15

0.004

0.005

0.006

0.007

0.010

0.011

0.012

0.014

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

150

125

100

75

25

0

−25

−50

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

30

25

20

15

10

5

10

100

1000

10,000

40

VGS = 3.6 V

4.2

3.8 V

3.0 V

2.8 V

2.6 V

2.4 V

TJ = 25°C

VDS = 10 V

TJ = 25°C

TJ = 125°C

TJ = −55°C

0.014

0.008

0.009

0.013

ID = 30 A

TJ = 25°C

VGS = 4.5 V

TJ = 25°C

VGS = 10 V

50

175

ID = 30 A

VGS = 10 V

VGS = 0 V

TJ = 85°C

TJ = 150°C

TJ = 125°C

4.0

10

40

0.018

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