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NTD4910N-1G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD4910N-1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 0 1 Publication Order Number: NTD4910N/D NTD4910N Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V Continuous Drain Current (RqJA) (Note 1) Steady State TA = 25°C ID 11.2 A TA = 100°C 7.9 Power Dissipation (RqJA) (Note 1) TA = 25°C PD 2.6 W Continuous Drain Current (RqJA) (Note 2) TA = 25°C ID 8.2 A TA = 100°C 5.8 Power Dissipation (RqJA) (Note 2) TA = 25°C PD 1.37 W Continuous Drain Current (RqJC) (Note 1) TC = 25°C ID 37 A TC = 100°C 26 Power Dissipation (RqJC) (Note 1) TC = 25°C PD 27.3 W Pulsed Drain Current tp=10ms TA = 25°C IDM 152 A Current Limited by Package TA = 25°C IDmaxPkg 60 A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C Source Current (Body Diode) IS 23 A Drain to Source dV/dt dV/dt 7.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, L = 0.1 mH, IL(pk) = 22.5 A, RG = 25 W) EAS 25.3 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. CASE 369AA DPAK (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS CASE 369D IPAK (Straight Lead DPAK) 30 V 9.0 mW @ 10 V RDS(on) MAX 37 A ID MAX V(BR)DSS 13 mW @ 4.5 V http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ORDERING INFORMATION 1 2 3 4 CASE 369AD IPAK (Straight Lead) 1 2 3 4 N−Channel D S G 1 Gate 2 Drain 3 Source 4 Drain 4 Drain 2 Drain 1 Gate 3 Source 4 Drain 2 Drain 1 Gate 3 Source Y = Year WW = Work Week 4910N = Device Code G = Pb−Free Package 1 2 3 4 |
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