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NTD4909N-1G Datasheet(PDF) 5 Page - ON Semiconductor |
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NTD4909N-1G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 8 page NTD4909N http://onsemi.com 5 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) 25 20 15 10 30 5 0 0 500 1000 1500 2000 18 14 12 10 8 4 2 0 0 1.5 3.0 6.0 9.0 10.5 12.0 15.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 10 1 1 10 100 1000 0.8 0.2 1.0 0.6 0 0.4 0 5 10 15 20 25 30 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) 100 10 1 0.1 0.1 1 10 100 1000 175 150 125 100 75 50 25 0 5 10 15 20 25 30 VGS = 0 V TJ = 25°C Ciss Coss Crss 616 20 4.5 7.5 13.5 TJ = 25°C QT Qgs Qgd VDD = 15 V VGS = 10 V ID = 30 A VDD = 15 V ID = 15 A VGS = 10 V td(off) td(on) tr tf TJ = 25°C TJ = 125°C VGS = 0 V VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 ms 10 ms 10 ms 1 ms dc ID = 24 A |
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