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FG4000GX-90DA Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. FG4000GX-90DA
Description  HIGH POWER INVERTER USE PRESS PACK TYPE
Download  4 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FG4000GX-90DA Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Aug.1998
30
25
20
15
5
10
100
23
5 7 101
23
5 7 102
102
104
7
5
3
2
024
103
7
5
3
2
68
10
13
57
9
Tj = 125°C
103
10–1
104
105
102
7
5
3
2
100
7
5
3
2
101
7
5
3
2
7
5
3
2
106
23 5 7
23 5 7
102
103
23 5 7
23 5 7
VFGM = 10V
VGT = 1.5V
PFG(AV) = 130W
IFGM = 130A
Tj = 25°C
PFGM = 520W
IGT = 2500mA
23
100
57 101
0.016
0
23
10–3
5710–2 23 5 710–1 23 5 7 100
0.008
0.006
0.004
0.002
0.010
0.012
0.014
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
GATE CURRENT (mA)
GATE CHARACTERISTICS
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
4.3
10
150
10
8
1.5
2500
0.011
V
mA
mA
mA
V/
µs
µs
A
V
mA
°C/W
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125
°C, ITM = 4000A, Instantaneous measurment
Tj = 125
°C, VRRM Applied
Tj = 125
°C, VDRM Applied, VGK = –2V
Tj = 125
°C, VRG = 17V
Tj = 125
°C, VD = 2250V, VGK = –2V
Tj = 125
°C, ITM = 4000A, IGM = 25A, VD = 3400V
Junction to fin
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000GX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
VTM
IRRM
IDRM
IRG
dv/dt
tgt
IGQM
VGT
IGT
Rth(j-f)
tgq
Turn-off time
Tj = 125
°C, ITM = 4000A, VDM = 4500V, diGQ/dt = –50A/µs
VRG = 17V, CS = 4.0
µF, LS = 0.2µH
DC METHOD : VD = 24V, RL = 0.1
Ω, Tj = 25°C
—35
µs
900
1000
PERFORMANCE CURVES


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