APT30GN60K(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 2mA)

Gate Threshold Voltage

(V

CE

= V

GE

, I

C

= 430µA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 30A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 30A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 600V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

APT30GN60K(G)

600

±30

63

37

75

75A @ 600V

203

-55 to 175

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

conduction loss. Easy paralleling is a result of very tight parameter distribution and a

design and minimizes losses.

• Easy Paralleling

• 6µs Short Circuit Capability

• 175°C Rated

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MIN

TYP

MAX

600

5.0

5.8

6.5

1.1

1.5

1.9

1.7

25

1000

300

600V

APT30GN60K

APT30GN60KG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

G

C

E

Microsemi Website - http://www.microsemi.com

TO-220