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APT30GN60KG Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APT30GN60KG
Description  Resonant Mode Combi IGBT
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT30GN60KG Datasheet(HTML) 4 Page - Microsemi Corporation

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APT30GN60K(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
= 400V
R
G
= 4.3
Ω
L = 100µH
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 400V
T
J
= 25°C
, or =125°C
R
G
= 4.3
Ω
L = 100µH
16
14
12
10
8
6
4
2
0
60
50
40
30
20
10
0
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
250
200
150
100
50
0
100
80
60
40
20
0
1600
1400
1200
1000
800
600
400
200
0
3000
2500
2000
1500
1000
500
0
V
GE
= 15V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
0
10
20
30
40
50
0
25
50
75
100
125
R
G
= 4.3
Ω, L = 100µH, V
CE
= 400V
T
J
= 25 or 125°C,V
GE
= 15V
T
J
= 125°C, V
GE
= 15V
T
J
= 25°C, V
GE
= 15V
R
G
= 4.3
Ω, L = 100µH, V
CE
= 400V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
Ω
T
J
= 125°C
T
J
= 25°C
E
on2,
60A
E
off,
60A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A
E
on2,
60A
E
off,
60A
E
on2,
30A
E
off,
30A
E
on2,
15A
E
off,
15A


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