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T15V2M16B Datasheet(PDF) 3 Page - Taiwan Memory Technology

Part # T15V2M16B
Description  128K X 16 LOW POWER CMOS STATIC RAM?
Download  12 Pages
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15V2M16B Datasheet(HTML) 3 Page - Taiwan Memory Technology

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TE
CH
tm
T15V2M16B
TM Technology Inc. reserves the right
P. 3
Publication Date: NOV. 2002
to change products or specifications without notice.
Revision:A
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYM
MIN.
MAX.
UNIT
Voltage on Any Pin Relative to VSS
VR
-0.2
+4.6 V
V
Power Dissipation
PD
-
1.0
W
Storage Temperature
TSTG
-55
+150
°C
Temperature Under Bias
IBIAS
-10 / -40
+70 / +85
°C
*Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to
the device.
This is a stress rating only and function operation of the device at these or any other
conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
CE
OE
WE
LB
UB
I/O 1~8
I/O 9~16
MODE
Power
H
X*
X*
X*
X*
High-Z
High-Z
Deselected
Standby
X*
X*
X*
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
L
X*
High-Z
High-Z
Output Disabled
Active
L
H
H
X*
L
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Data Out
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Data Out
Upper Byte Read
Active
L
L
H
L
L
Data Out
Data Out
Word Read
Active
L
X*
L
L
H
Data In
High-Z
Lower Byte Write
Active
L
X*
L
H
L
High-Z
Data In
Upper Byte Write
Active
L
X*
L
L
L
Data In
Data In
Word Write
Active
*Note: X = Don’t Care (Must be low or high state), L = Low, H = High


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