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T14M1024A Datasheet(PDF) 2 Page - Taiwan Memory Technology

Part No. T14M1024A
Description  128K X 8 HIGH SPEED CMOS STATIC RAM
Download  10 Pages
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T14M1024A Datasheet(HTML) 2 Page - Taiwan Memory Technology

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TE
CH
tm
T14M1024A
TM Technology Inc. reserves the right
P. 2
Publication Date: SEP. 2002
to change products or specifications without notice.
Revision:E
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYM
RATING
UNIT
Power Supply Voltage
Vcc
-0.5 to 7.0
V
Input Voltage
VIN
-0.5 to Vcc+0.5
V
Output Voltage
VOUT
-0.5 to Vcc+0.5
V
Operating Temperatrue
TOPR
0 to +70
°C
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
1.0
W
Short Circuit Output Current
IOUT
50
mA
TRUTH TABLE
CE1
CE2
OE
WE
MODE
I/O0- I/O7
Vcc
H
X
X
X
Not Selected
High-Z
I
SB, I
SB1
X
L
X
X
Not Selected
High-Z
I
SB, I
SB1
L
H
H
H
Output Disable
High-Z
Icc
L
H
L
H
Read
Data Out
Icc
L
H
X
L
Write
Data In
Icc
OPERATING CHARACTERISTICS
(Vcc = 5V
± 10%, Ta = 0 to 70°C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
MAX.
UNIT
Power Supply Voltage
Vcc
4.5
5.5
V
Input Low Voltage
VIL
-0.5
0.8
V
Input High Voltage
VIH
2.2
Vcc+0.5
V
Input Leakage Current
I
LI
VIN =Vss to Vcc
-
5
uA
Output Leakage Current
I
LO
VIN=Vss to Vcc , CE1 = VIH or CE2
= VIL or OE = VIH or WE = VIL
-
5
uA
Output Low Voltage
V
OL
I
OL = 4.0 mA
-
0.4
V
Output High Voltage
V
OH
I
OH =-2.0 mA
2.4
-
V
Operating Power
Icc
CE1
=
V
IL
10ns
-
110
mA
Supply Current
CE2 = VIH ;f=max
12ns
-
105
mA
IO = 0mA
15ns
-
100
mA
Standby Power
I
SB
CE1
=
V
IH , CE2 = VIL, IO = 0mA
-
25
mA
Supply Current
I
SB1
Vcc = max; CE1
≥ Vcc-0.2V or CE2
≤ Vss+0.2V; f=0mhz; IO = 0mA
-
5
mA
Note: Typical characteristics are at Vcc = 5V, Ta = 25
°C


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