2SD2093 datasheet(2/3 Pages) JMNIC

Part #	2SD2093

Description	Silicon NPN Power Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Product Specification

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Silicon NPN Power Transistors

2SD2093

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEsat

Collector-emitter saturation voltage

IC=5A;IB=10m A

0.9

V

VBEsat

Base-emitter saturation voltage

IC=5A;IB=10m A

2.0

V

VCEO(BR)

Collector-emitter breakdown voltage

IC=5mA;IB=0

110

V

VCBO(BR)

Collector-base breakdown voltage

IC=50mA;RBE=∞

100

V

IEBO

Emitter cut-off current

VEB=5V; IC=0

3.0

mA

ICBO

Collector cut-off current

VCB=80V; IE=0

0.1

mA

hFE

DC current gain

IC=5 A ; VCE=3V

1500

4000

fT

Transition frequency

IC=5 A ; VCE=5V

20

MHz

Switching times

ton

Turn-on time

0.6

μs

ts

Storage time

4.8

μs

tf

Fall time

IC=5A IB1=-IB2=10mA

VCC=50V ,RL=10Ω

1.6

μs

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