MoBL® CY62148EV30
Document #: 38-05576 Rev. *G
Page 3 of 12
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied .............................................. 55°C to +125°C
Supply Voltage to Ground
Potential..........................................–0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State [5, 6] ........................–0.3V to VCC(max) + 0.3V
DC Input Voltage [5, 6] .....................–0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA
Operating Range
Product
Range
Ambient
Temperature
VCC [7]
CY62148EV30
Ind’l/Auto-A –40°C to +85°C 2.2V to 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
- 45 (Ind’l/Auto-A)
- 55 [1]
Unit
Min Typ[4]
Max
Min Typ[4]
Max
VOH
Output HIGH
Voltage
IOH = –0.1 mA
2.0
2.0
V
IOH = –1.0 mA, VCC > 2.70V
2.4
2.4
V
VOL
Output LOW
Voltage
IOL = 0.1 mA
0.4
0.2
V
IOL = 2.1 mA, VCC > 2.70V
0.4
0.4
V
VIH
Input HIGH
Voltage
VCC = 2.2V to 2.7V
1.8
VCC + 0.3V 1.8
VCC + 0.3V V
VCC= 2.7V to 3.6V
2.2
VCC + 0.3V 2.2
VCC + 0.3V V
VIL
Input LOW
Voltage
VCC = 2.2V to 2.7V For VFBGA and
TSOP II package
–0.3
0.6
V
For SOIC package
–0.3
0.4 [8]
V
VCC = 2.7V to 3.6V For VFBGA and
TSOP II package
–0.3
0.8
V
For SOIC package
–0.3
0.6 [8]
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
μA
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
–1
+1
–1
+1
μA
ICC
VCC Operating
Supply Current
f = fmax = 1/tRC
VCC = VCC(max),
IOUT = 0 mA,
CMOS levels
15
20
15
20
mA
f = 1 MHz
2
2.5
2
2.5
ISB1
Automatic CE
Power Down
Current — CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V
f = fmax (Address and Data Only),
f = 0 (OE and WE), VCC = 3.60V
17
17
μA
ISB2 [9]
Automatic CE
Power Down
Current — CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
17
17
μA
Notes
5. VIL(min) = –2.0V for pulse durations less than 20 ns.
6. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
7. Full device AC operation assumes a minimum of 100
μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.
8. Under DC conditions the device meets a VIL of 0.8V (for VCC range of 2.7V to 3.6V) and 0.6V (for VCC range of 2.2V to 2.7V). However, in dynamic conditions
Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. This is applicable to SOIC package only. Please refer to
AN13470 for details.
9. Only chip enable (CE) must be HIGH at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
[+] Feedback