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CY62148BN MoBL®
Document #: 001-06517 Rev. *A
Page 5 of 10
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.[1]
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
Com’l
LL
No input may exceed
VCC + 0.3V
VCC = VDR = 3.0V
CE > VCC – 0.3V
VIN > VCC – 0.3V or
VIN < 0.3V
20
µA
Ind’l
LL
20
µA
tCDR
[4]
Chip Deselect to Data Retention Time
0
ns
tR
[9]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No.1[10, 11]
Read Cycle No. 2 (OE Controlled)[11, 12]
Notes:
9. Full Device operation requires linear VCC ramp from VDR to VCC(min) > 100 ms or stable at Vcc(min) > 100 ms.
10. Device is continuously selected. OE, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
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