CY62137FV18 MoBL®
Document #: 001-08030 Rev. *E
Page 3 of 11
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .....................................................–0.2V to + 2.45V
DC Voltage Applied to Outputs
in High Z State [4, 5].........................................–0.2V to 2.45V
DC Input Voltage [4, 5].....................................–0.2V to 2.45V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC [6]
CY62137FV18
Industrial –40°C to +85°C 1.65V to 2.25V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
55 ns
Unit
Min
Typ [1]
Max
VOH
Output HIGH Voltage
IOH = –0.1 mA
1.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
0.2
V
VIH
Input HIGH Voltage
VCC =1.65V to 2.25V
1.4
VCC + 0.2V V
VIL
Input LOW Voltage
VCC =1.65V to 2.25V
–0.2
0.4
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, output disabled
–1
+1
µA
ICC
VCC Operating Supply
Current
f = fmax = 1/tRC
VCC(max) = 2.25V
IOUT = 0 mA
CMOS levels
13
18
mA
f = 1 MHz
VCC(max) = 2.25V
1.6
2.5
mA
ISB1
Automatic CE Power Down
Current–CMOS
Inputs
CE > VCC− 0.2V,
VIN>VCC – 0.2V, VIN < 0.2V)
f = fmax (address and data only), f
= 0 (OE, WE, BHE and BLE)
VCC(max) = 2.25V
1
5
µA
ISB2 [7]
Automatic CE Power Down
Current–CMOS
Inputs
CE > VCC– 0.2V,
VIN > VCC – 0.2V or
VIN < 0.2V, f = 0
VCC(max) = 2.25V
1
5
µA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max)=VCC+0.5V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
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