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CY14E104M-ZS25XCT Datasheet(PDF) 5 Page - Cypress Semiconductor

Part # CY14E104M-ZS25XCT
Description  4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14E104M-ZS25XCT Datasheet(HTML) 5 Page - Cypress Semiconductor

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PRELIMINARY
CY14E104K/CY14E104M
Document #: 001-09604 Rev. *H
Page 5 of 28
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) is issued to save the
AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Table 1. Mode Selection
CE
WE
OE
A15 - A0
Mode
IO
Power
H
X
X
X
Not Selected
Output High Z
Standby
L
H
L
X
Read SRAM
Output Data
Active
L
L
X
X
Write SRAM
Input Data
Active
LH
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8B45
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Disable
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active[4, 5, 6]
LH
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4B46
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
AutoStore
Enable
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Active[4, 5, 6]
LH
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile Store
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active ICC2
[4, 5, 6]
LH
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Recall
Output Data
Output Data
Output Data
Output Data
Output Data
Output High Z
Active[4,5,6]
Notes
4. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle.
5. While there are 19 address lines on the CY14E104K/CY14E104M, only the lower 16 lines are used to control software modes.
6. IO state depends on the state of OE, BHE, and BLE. The IO table shown assumes OE, BHE, and BLE LOW.
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