CY14E256L
256 Kbit (32K x 8) nvSRAM
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
, CA 95134-1709
•
408-943-2600
Document Number: 001-06968 Rev. *G
Revised May 18, 2009
Features
■ 25 ns, 35 ns, and 45 ns Access Times
■ Pin Compatible with STK14C88
■ Hands Off Automatic STORE on Power Down with External
68 µF Capacitor
■ STORE to QuantumTrap Nonvolatile Elements is Initiated by
Software, Hardware, or AutoStore on Power Down
■ RECALL to SRAM Initiated by Software or Power Up
■ Unlimited READ, WRITE, and RECALL Cycles
■ 1,000,000 STORE Cycles to QuantumTrap
■ 100 Year Data Retention to QuantumTrap
■ Single 5V+10% Operation
■ Commercial and Industrial Temperature
■ 32-pin SOIC Package (RoHS Compliance)
■ CDIP (300 mil) Package
Functional Description
The Cypress CY14E256L is a fast static RAM with a nonvolatile
element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM provides
unlimited read and write cycles, while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down. On
power up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control. A hardware
STORE is initiated with the HSB pin.
STORE/
RECALL
CONTROL
POWER
CONTROL
SOFTWARE
DETECT
STATIC RAM
ARRAY
512 X 512
Quantum Trap
512 X 512
STORE
RECALL
COLUMN I/O
COLUMN DEC
OE
CE
WE
HSB
VCC
VCAP
A13
- A0
A0 A1 A2 A3 A4 A10
A5
A6
A7
A8
A9
A11
A12
A13
A14
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Logic Block Diagram
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