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ISL85001 Datasheet(PDF) 5 Page - Intersil Corporation |
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ISL85001 Datasheet(HTML) 5 Page - Intersil Corporation |
5 / 15 page 5 FN6769.1 March 17, 2009 ENABLE SECTION EN Threshold Rising Edge 1.2 1.7 2.2 V Hysteresis - 400 - mV EN Logic Input Current -1 - 1 µA FAULT PROTECTION Thermal Shutdown Temperature TSD Rising Threshold - 150 - °C THYS Hysteresis - 15 - °C PWM UV Trip Level VUV Referred to Nominal VOUT 70 75 80 % PWM UVP Propagation Delay - 270 - ns PWM OCP Threshold VIN = VDD = 5V, (Note 4) 1.37 1.7 2.17 A OCP Blanking Time - 100 - ns POWER-GOOD PG Trip Level Referred to Nominal VOUT Lower Level, Falling Edge, with typically 15mV hysteresis 85 88 91 % Upper Level, Rising Edge, with typically 15mV hysteresis 108 112 116 % PG Propagation Delay -9 - µs PG Low Voltage ISINK = 4mA - 0.05 0.3 V PG Leakage Current VPG = 5.5V, VFB = 0.6V, VDD = 5.5V -1 - 1 µA SOFT-START SECTION Soft-Start Threshold to Enable Buck 0.9 1 1.1 V Soft-Start Threshold to Enable PG 2.5 3.0 3.5 V Soft-Start Voltage High -3.45 - V Soft-Start Charging Current 20 30 40 µA Soft-Start Pull-down VSS = 3.0V - 25 - mA POWER MOSFET rDS(ON) IOUT = 100mA, Die Resistance - 120 200 m Ω NOTES: 3. Test Condition: VIN = 15V, FB forced above regulation point (0.6V), no switching, and power MOSFET gate charging current not included. 4. Excluding the blanking time. Electrical Specifications Typical Specifications are Measured at the Following Conditions: TA = -40°C to +85°C. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization and are not production tested. (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ISL85001 |
Similar Part No. - ISL85001_09 |
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Similar Description - ISL85001_09 |
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