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T810H-6G-TR Datasheet(PDF) 5 Page - STMicroelectronics

Part # T810H-6G-TR
Description  High temperature 8 A sensitive TRIACs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T810H-6G-TR Datasheet(HTML) 5 Page - STMicroelectronics

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T810H
Characteristics
Doc ID 15714 Rev 1
5/10
Figure 9.
On-state characteristics (maximum
values)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
junction temperature
1
10
100
012
345
ITM (A)
T
j=25 °C
T
j=150 °C
T
j max
V
to = 0.80 V
R
d = 55 mΩ
VTM (V)
(dI/dt)C [Tj]/ (dI/dt)c [Tj=150 °C]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25
50
75
100
125
150
Tj(°C)
Figure 11.
Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
Figure 12.
Relative variation of static dV/dt
immunity versus junction
temperature
0
1
2
3
4
0.1
1.0
10.0
100.0
(dI/dt)
c [(dV/dt)c ] / Specified (dI/dt)c
(dV/dt)C (V/µs)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25
50
75
100
125
150
dV/dt [T
j]/ dV/dt[T j=150 °C]
V
D=VR=400 V
Tj(°C)
Figure 13.
Variation of leakage current versus
junction temperature for different
values of blocking voltage
Figure 14.
Acceptable case to ambient thermal
resistance versus repetitive peak
off-state voltage
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25
50
75
100
125
150
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V]
V
DRM=VRRM=400 V
V
DRM=VRRM=400 V
V
DRM=VRRM=600 V
V
DRM=VRRM=600 V
V
DRM=VRRM=200 V
V
DRM=VRRM=200 V
Tj(°C)
0
5
10
15
20
25
30
35
40
45
50
55
60
200
300
400
500
600
R
th(c-a)(°C/W)
R
th(j-c)=1.6 °C/W
T
J=150 °C
VAC PEAK(V)


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