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T810H Datasheet(PDF) 2 Page - STMicroelectronics

Part # T810H
Description  High temperature 8 A sensitive TRIACs
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

T810H Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
T810H
2/10
Doc ID 15714 Rev 1
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current (full sine wave)
D2PAK, TO-220AB
Tc = 135 °C
8
A
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 60 Hz
t = 16.7 ms
84
A
F = 50 Hz
t = 20 ms
80
I²tI²t Value for fusing
tp = 10 ms
42
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 150 °C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
IGM
Peak gate current
tp = 20 µs
Tj = 150 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
Min
Max.
Unit
IGT
VD = 12 V RL = 33 Ω
I - II - III
1
10
mA
VGT
I - II - III
1.0
V
VGD
VD = VDRM, RL = 3.3 kΩ
I - II - III
0.15
V
IH
(1)
IT = 100 mA
25
mA
IL
IG = 1.2 IGT
I - III
30
mA
II
35
dV/dt (1)
VD = 67% VDRM, gate open, Tj = 150 °C
75
V/µs
(dI/dt)c (1)
Logic level, 0.1 V/µs, Tj = 150 °C
11.4
A/ms
Logic level, 15 V/µs, Tj = 150 °C
3.0
1.
For both polarities of A2 referenced to A1.


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