PSMN013-80YS datasheet(1/13 Pages) NXP

Part #	PSMN013-80YS

Description	N-channel LFPAK 80 V 12.9 m廓 standard level MOSFET

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PSMN013-80YS

N-channel LFPAK 80 V 12.9 m

Ω standard level MOSFET

Rev. 01 — 25 June 2009

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

RDSon and low gate charge

High efficiency gains in switching

power converters

Improved mechanical and thermal

characteristics

LFPAK provides maximum power

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 150 °C

--80

V

ID

drain current

Tmb =25°C; VGS = 10 V; see Figure 1

--60

A

Ptot

total power dissipation

Tmb = 25 °C; see Figure 2

-

106

W

Tj

junction temperature

-55

-

175

°C

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

VGS =10V; Tj(init) =25°C; ID =55A; Vsup ≤ 80 V;

RGS =50 Ω; unclamped

--70

mJ

Dynamic characteristics

QGD

gate-drain charge

VGS =10V; ID =25A; VDS =40V; see Figure 14;

see Figure 15

-8

-nC

QG(tot)

total gate charge

VGS =10V; ID =25A; VDS =40V; see Figure 14;

see Figure 15

-37

-

nC

Static characteristics

RDSon

drain-source on-state

resistance

VGS =10V; ID =15A; Tj = 100 °C; see Figure 12

-

19.8

m

Ω

VGS =10V; ID =15A; Tj = 25 °C; see Figure 13

-

9.7

12.9

m

Ω

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