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PMBT3906M Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMBT3906M Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 11 page PMBT3906M_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 22 July 2009 7 of 11 NXP Semiconductors PMBT3906M 40 V, 200 mA PNP switching transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline VI = 5 V; t = 600 µs; tp =10 µs; tr =tf ≤ 3ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = 1.9 V; VCC = −3V Oscilloscope: input impedance Zi =50 Ω Fig 8. Test circuit for switching times RC R2 R1 DUT mgd624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC Fig 9. Package outline SOT883 (SC-101) 03-04-03 Dimensions in mm 0.62 0.55 0.55 0.47 0.50 0.46 0.65 0.20 0.12 3 21 0.30 0.22 0.30 0.22 1.02 0.95 0.35 |
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