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BD237 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. BD237
Description  Plastic Medium Power Silicon NPN Transistor
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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BD237 Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Base Voltage
VCBO
100
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25_C
PD
25
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
5.0
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
V(BR)CEO
80
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
hFE1
hFE2
40
25
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
0.6
Vdc
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
1.3
Vdc
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
3.0
MHz
* Pulse Test: Pulse Width
x 300 µs, Duty Cycle x 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD237/D
© Motorola, Inc. 1995
BD237
2.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
25 WATTS
CASE 77–08
TO–225AA TYPE
REV 7


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