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BD169 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. BD169
Description  Plastic Medium Power Silicon NPN Transistor
Download  4 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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BD169 Datasheet(HTML) 2 Page - Motorola, Inc

   
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BD165 BD169
2
Motorola Bipolar Power Transistor Device Data
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Figure 1. PD – TC Derating Curve
TC, CASE TEMPERATURE (°C)
10
Figure 2. Safe Operating Area (see Note 1)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
3.0
2.0
1.0
0.5
0.1
5.0
7.0
10
20
30
100
50
0.3
0.2
PULSE CURVES APPLY BELOW
RATED VCEO
TJ = 150°C
dc
5.0 ms
1.0 ms
100
µs
70
BD165
BD169
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
1.2
0
1
1
0.8
0.6
0.4
0.2
5
10
50
100
500
1000
IC = 0.1 A
0.25 A
1 A
0.5 A
10
0.01
Figure 4. Current Gain
IC, COLLECTOR CURRENT (A)
0.1
0.05
0.1
0.5
1
1
TJ = + 150°C
+ 25
°C
– 25
°C
VCE = 2 V
Figure 5. “On” Voltage
IC, COLLECTOR CURRENT (mA)
1
0.5
0.1
0.05
0.01
10
50
100
500
1000
VBE at VCE = 2 V
VBE(sat) at IC/IB = 10
TJ = 25°C
VCE(sat) at IC/IB = 10
Note 1:
There are two limitations on the power handling ability of a
transistor; average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.


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