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BD157 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. BD157
Description  Plastic Medium Power NPN Silicon Transistor
Download  4 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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BD157 Datasheet(HTML) 2 Page - Motorola, Inc

   
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BD157 BD158 BD159
2
Motorola Bipolar Power Transistor Device Data
25
20
15
10
5.0
0
20
40
60
80
100
120
140
160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
1.0
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
0
20
30
50
100
200 300
500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
TJ = + 25°C
VBE @ IC/IB = 10
IC/IB = 5.0
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01
20
30
50
100
300
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
TJ = 150°C
dc
500
µs
10
µs
1.0 ms
BD157
BD158
BD159
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10
1.0
2.0
3.0
5.0
10
20
30
50
100
200
300
500
300
200
70
30
20
TJ = 150°C
50
100
+ 100
°C
+ 25
°C
– 55
°C
7.0
70
VCE = 10 V
VCE = 2.0 V


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