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BD157 Datasheet(PDF) 1 Page - Motorola, Inc |
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BD157 Datasheet(HTML) 1 Page - Motorola, Inc |
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1 / 4 page  1 Motorola Bipolar Power Transistor Device Data Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad{ Construction Provides High Power Dissipation Rating for High Reliability MAXIMUM RATINGS Rating Symbol BD 157 BD 158 BD 159 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCB 275 325 375 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous Peak IC 0.5 1.0 Adc Base Current IB 0.25 Adc Total Device Dissipation @ TC = 25_C Derate above 25 _C PD 20 0.16 Watts W/ _C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case θJC 6.25 _C/W ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Type Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) BVCEO BD 157 BD 158 BD 159 250 300 350 — Vdc Collector Cutoff Current (At rated voltage) ICBO — 100 µAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO — 100 µAdc ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) hFE 30 240 — MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD157/D © Motorola, Inc. 1995 BD157 BD158 BD159 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS 20 WATTS CASE 77–08 TO–225AA TYPE REV 7 |
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