TPS2100, TPS2101

SLVS197C – JUNE 1999 – REVISED APRIL 2000

3

POST OFFICE BOX 655303

Function Tables

TPS2100

TPS2101

VIN1

VIN2

EN

OUT

VIN1

VIN2

EN

OUT

0 V

0 V

XX

GND

0 V

0 V

XX

GND

0 V

3.3 V

L

GND

0 V

3.3 V

H

GND

3.3 V

3.3 V

L

VIN1

3.3 V

3.3 V

H

VIN1

3.3 V

0 V

L

VIN1

3.3 V

0 V

H

VIN1

0 V

3.3 V

H

VIN2

0 V

3.3 V

L

VIN2

3.3 V

0 V

H

VIN2

3.3 V

0 V

L

VIN2

3.3 V

3.3 V

H

VIN2

3.3 V

3.3 V

L

VIN2

XX = don’t care

Terminal Functions

TERMINAL

NO.

DESCRIPTION

NAME

TPS2100

TPS2101

I/O

DESCRIPTION

DBV

D

DBV

D

EN

1

3

Active-high enable for IN1-OUT switch

EN

1

3

I

Active-low enable for IN1-OUT switch

GND

2

2

2

2

I

Ground

IN1

5

5

5

5

I

Main Input voltage, NMOS drain (250 m

Ω)

IN2

3

1

3

1

I

Auxilliary input voltage, PMOS drain (1.3

Ω

)

OUT

4

7, 8

4

7, 8

O

Power switch output

NC

4, 6

4, 6

No connection

detailed description

power switches

n-channel MOSFET

The IN1-OUT n-channel MOSFET power switch has a typical on-resistance of 250 m

Ω at 3.3-V input voltage,

and is configured as a high-side switch.

p-channel MOSFET

The IN2-OUT p-channel MOSFET power switch with typical on-resistance of 1.3

Ω at 3.3-V input voltage and

is configured as a high-side switch. When operating, the p-channel MOSFET quiescent current is reduced to

less than 1.5

µA.

charge pump

An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate

of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires

very little supply current.

driver

The driver controls the gate voltage of the IN1-OUT and IN2-OUT power switches. To limit large current surges

and reduce the associated electromagnetic interference (EMI) produced, the drivers incorporate circuitry that

controls the rise times and fall times of the output voltage.