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ASM3P2180A Datasheet(PDF) 3 Page - PulseCore Semiconductor

Part No. ASM3P2180A
Description  Peak Reducing EMI Solution
Download  8 Pages
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Manufacturer  PULSECORE [PulseCore Semiconductor]
Direct Link  http://www.onsemi.com/
Logo PULSECORE - PulseCore Semiconductor

ASM3P2180A Datasheet(HTML) 3 Page - PulseCore Semiconductor

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Peak Reducing EMI Solution
3 of 8
February 2008
ASM3P2180A
rev 1.2
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
-0.5 to +4.6
V
TSTG
Storage temperature
-65 to +125
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage (As per JEDEC STD22- A114-B)
2
KV
Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect
device reliability.
DC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
VIL
Input low voltage
GND – 0.3
0.8
V
VIH
Input high voltage
2.0
VDD + 0.3
V
IIL
Input low current (pull-up resistors on inputs SS%, FS)
-27
µA
IIH
Input high current
18
µA
IXOL
XOUT output low current (@ 0.4V, VDD = 3.3V)
3
mA
IXOH
XOUT output high current (@2.5V, VDD = 3.3V)
4
mA
VOL
Output low voltage (VDD = 3.3V, IOL = 4mA)
0.4
V
VOH
Output high voltage (VDD = 3.3V, IOH = 4mA)
2.5
V
ICC
Dynamic supply current normal mode (3.3V and 10pF
loading)
10
15
25
mA
IDD *
Static supply current standby mode
7
mA
VDD
Operating voltage
2.8
3.3
3.7
V
tON
Power up time (first locked clock cycle after power up)
0.18
mS
ZOUT
Clock output impedance
50
*CLKIN pin pulled to GND


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