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CHT817N1PT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd. |
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CHT817N1PT Datasheet(HTML) 2 Page - Chenmko Enterprise Co. Ltd. |
2 / 4 page THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to ambient note 1 105 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 25 V − 100 nA IEBO IC = 0; VCB = 25 V; TA = 150 OC − 50 uA emitter cut-off current IC = 0; VEB = 4 V − 100 nA hFE DC current gain IC = 100 mA; VCE =1.0V; note 1 100 600 VCEsat collector-emitter saturation voltage IC = 500 mA ; IB = 50 mA − 1.2 mV VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50mA Cc collector capacitance IE = ie = 0; VCB = 10V ; f = 1 MHz − 6.0 pF fT transition frequency IC = 50 mA; VCE = 5 V ; f = 100 MHz 170 − MHz RATING CHARACTERISTIC ( CHT817N1PT ) V 700 2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600 |
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