CHT817N1PT datasheet(2/4 Pages) CHENMKO

Part #	CHT817N1PT

Description	NPN Muti-Chip General Purpose Amplifier

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Manufacturer	CHENMKO [Chenmko Enterprise Co. Ltd.]

Direct Link	http://www.chenmko.com

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THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise speciÞed.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to ambient

note 1

105

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 25 V

−

100

nA

IEBO

IC = 0; VCB = 25 V; TA = 150 OC

−

50

uA

emitter cut-off current

IC = 0; VEB = 4 V

−

100

nA

hFE

DC current gain

IC = 100 mA; VCE =1.0V; note 1

100

600

VCEsat

collector-emitter saturation

voltage

IC = 500 mA ; IB = 50 mA

−

1.2

mV

VBEsat

base-emitter saturation voltage

IC = 500 mA; IB = 50mA

Cc

collector capacitance

IE = ie = 0; VCB = 10V ; f = 1 MHz

−

6.0

pF

fT

transition frequency

IC = 50 mA; VCE = 5 V ;

f = 100 MHz

170

−

MHz

RATING CHARACTERISTIC ( CHT817N1PT )

V

700

2. hFE: Classification Q: 100 to 250, R: 160 to 400, S: 250 to 600

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