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BC556B Datasheet(PDF) 1 Page - Motorola, Inc

Part No. BC556B
Description  Amplifier Transistors
Download  6 Pages
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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BC556B Datasheet(HTML) 1 Page - Motorola, Inc

   
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
556
BC
557
BC
558
Unit
Collector – Emitter Voltage
VCEO
–65
–45
–30
Vdc
Collector – Base Voltage
VCBO
–80
–50
–30
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
–65
–45
–30
V
Collector – Base Breakdown Voltage
(IC = –100 µAdc)
BC556
BC557
BC558
V(BR)CBO
–80
–50
–30
V
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
–5.0
–5.0
–5.0
V
Collector–Emitter Leakage Current
(VCES = –40 V)
BC556
(VCES = –20 V)
BC557
BC558
(VCES = –20 V, TA = 125°C)
BC556
BC557
BC558
ICES
–2.0
–2.0
–2.0
–100
–100
–100
–4.0
–4.0
–4.0
nA
µA
Order this document
by BC556/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC556,B
BC557A,B,C
BC558B
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER


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