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TLE2161 Datasheet(PDF) 1 Page - Texas Instruments

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Part No. TLE2161
Description  EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TLE2161 Datasheet(HTML) 1 Page - Texas Instruments

 
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TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
µPOWER OPERATIONAL AMPLIFIERS
SLOS049D – NOVEMBER 1989 – REVISED MAY 1996
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Excellent Output Drive Capability
VO = ± 2.5 V Min at RL = 100 Ω,
VCC± = ± 5 V
VO = ± 12.5 V Min at RL = 600 Ω,
VCC± = ± 15 V
D Low Supply Current... 280 µA Typ
D Decompensated for High Slew Rate and
Gain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/
µs Typ
Gain-Bandwidth Product = 6.5 MHz Typ
D Wide Operating Supply Voltage Range
VCC ± = ± 3.5 V to ± 18 V
D High Open-Loop Gain... 280 V/mV Typ
D Low Offset Voltage . . . 500 µV Max
D Low Offset Voltage Drift With Time
0.04
µV/Month Typ
D Low Input Bias Current...5 pA Typ
description
The TLE2161, TLE2161A, and TLE2161B are
JFET-input, low-power, precision operational
amplifiers
manufactured
using
the
Texas
Instruments Excalibur process. Decompensated
for stability with a minimum closed-loop gain of 5,
these devices combine outstanding output drive
capability with low power consumption, excellent
dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET
advantages of fast slew rates and low input bias
and offset currents, the Excalibur process offers
outstanding parametric stability over time and
temperature. This results in a device that remains
precise even with changes in temperature and
over years of use.
AVAILABLE OPTIONS
PACKAGE
TA
VIOmax
AT 25
°C
SMALL
OUTLINE
CHIP
CARRIER
CERAMIC
DIP
PLASTIC
DIP
AT 25 C
OUTLINE
(D)
CARRIER
(FK)
DIP
(JG)
DIP
(P)
0
°C
to
500
µV
15 mV
TLE2161ACD
TLE2161BCP
TLE2161ACP
to
70
°C
1.5 mV
3 mV
TLE2161ACD
TLE2161CD
TLE2161ACP
TLE2161CP
–40
°C
to
500
µV
15 mV
TLE2161AID
TLE2161BIP
TLE2161AIP
to
85
°C
1.5 mV
3 mV
TLE2161AID
TLE2161ID
TLE2161AIP
TLE2161IP
–55
°C
to
500
µV
15 mV
TLE2161AMD
TLE2161AMFK
TLE2161BMJG
TLE2161AMJG
TLE2161BMP
TLE2161AMP
to
125
°C
1.5 mV
3 mV
TLE2161AMD
TLE2161MD
TLE2161AMFK
TLE2161MFK
TLE2161AMJG
TLE2161MJG
TLE2161AMP
TLE2161MP
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
© 1996, Texas Instruments Incorporated
10 k
1 k
100
RL – Load Resistance – Ω
10
0
2
4
6
8
10
TA = 25°C
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
LOAD RESISTANCE
VCC
± = ± 5 V


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