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2N5839 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5839 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5838 275 2N5839 300 VCBO Collector-base voltage 2N5840 Open emitter 375 V 2N5838 250 2N5839 275 VCEO Collector-emitter voltage 2N5840 Open base 350 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A PD Total power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.25 ℃/W JMnic |
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