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TLC220X Datasheet(PDF) 1 Page - Texas Instruments

Part No. TLC220X
Description  Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TLC220X Datasheet(HTML) 1 Page - Texas Instruments

 
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TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS
™ LOW-NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175 – FEBRUARY 1997
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D B Grade Is 100% Tested for Noise
30 nV/
√Hz Max at f = 10 Hz
12 nV/
√Hz Max at f = 1 kHz
D Low Input Offset Voltage . . . 500 µV Max
D Excellent Offset Voltage Stability
With Temperature . . . 0.5
µV/°C Typ
D Rail-to-Rail Output Swing
D Low Input Bias Current
1 pA Typ at TA = 25°C
D Common-Mode Input Voltage Range
Includes the Negative Rail
D Fully Specified For Both Single-Supply and
Split-Supply Operation
description
The
TLC220x,
TLC220xA,
TLC220xB,
and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS
™ process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers
with
the
dc
precision
available
previously
only
in
bipolar
amplifiers.
The
Advanced LinCMOS
™ process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable
using
metal-gate
technology.
In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered
by
top-gate
JFET
and
expensive
dielectric-isolated devices.
The combination of excellent dc and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from – 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55
°C to 125°C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright
© 1997, Texas Instruments Incorporated
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
10
100
f – Frequency – Hz
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
1 k
10 k
50
40
30
20
10
0
VDD = 5 V
RS = 20 Ω
TA = 25°C
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.


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