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BC16116 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. BC16116
Description  Amplifier Transistors PNP Silicon
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BC16116 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–60
Vdc
Collector – Base Voltage
VCBO
–60
Vdc
Emitter – Base Voltage
VEBO
– 5.0
Vdc
Collector Current — Continuous
IC
– 1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
0.8
4.6
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
3.7
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
219
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = – 60 Vdc)
(IE = 0, VCES = – 60 Vdc, TAmb = 150°C)
ICES
– 100
– 100
nAdc
µAdc
Collector – Emitter Breakdown Voltage
(IC = – 100 µAdc, IE = 0)
V(BR)CES
–60
Vdc
Collector – Emitter Breakdown Voltage(1)
(IC = – 10 mAdc, IB = 0)
V(BR)CEO
–60
Vdc
Emitter – Base Breakdown Voltage
(IE = – 100 mAdc, IC = 0)
V(BR)EBO
– 5.0
Vdc
1. Pulsed: Pulse Duration = 300
ms, Duty Cycle = 2.0%.
Order this document
by BC161–16/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC161-16
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
1
2
3
© Motorola, Inc. 1997
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces BC160–16/D)


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