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SN75374 Datasheet(PDF) 11 Page - Texas Instruments |
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SN75374 Datasheet(HTML) 11 Page - Texas Instruments |
11 / 13 page SN75374 QUADRUPLE MOSFET DRIVER SLRS028 – SEPTEMBER 1988 3–11 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as shown by the equation I PK + VC tr where C is the capacitive load, and tr is the desired rise time. V is the voltage that the capacitance is charged to. In the circuit shown in Figure 14(a), V is found by the equation V = VOH – VOL Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14(a) is I PK + (3 * 0)4(10 *9) 100(10 * 9) + 120 mA Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151. With a VCC of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V. For applications in which the full voltage of VCC2 must be supplied to the MOSFET gate, VCC3 should be at least 3 V higher than VCC2. |
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