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IXFN27N80 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFN27N80 Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page 1 - 4 © 2000 IXYS All rights reserved TO-264 AA (IXFK) S G D D S G S S G S D miniBLOC, SOT-227 B (IXFN) E153432 (TAB) G = Gate D = Drain S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features · International standard packages · JEDEC TO-264 AA, epoxy meet UL94V-0, flammability classification · miniBLOC,with Aluminium nitride isolation · Low R DS (on) HDMOS TM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls Advantages · Easy to mount · Space savings · High power density Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 3 mA 800 V V DSS temperature coefficient 0.096 %/K V GH(th) V DS = V GS, ID = 8 mA 2 4.5 V V GS(th) temperature coefficient -0.214 %/K I GSS V GS = ±20 VDC, VDS = 0 ±200 nA I DSS V DS = 0.8 • V DSS T J = 25 °C 500 mA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, 25N80 0.35 W duty cycle d £ 2 % 27N80 0.30 W Symbol Test Conditions Maximum Ratings IXFK IXFN V DSS T J = 25 °C to 150°C 800 800 V V DGR T J = 25 °C to 150°C; R GS = 1 MW 800 800 V V GS Continuous ±20 ±20 V V GSM Transient ±30 ±30 V I D25 T C = 25 °C, Chip capability 27N80 27 27 A 25N80 25 25 A I DM T C = 25 °C, pulse width limited by T JM 27N80 108 108 A T C = 25 °C 25N80 100 100 A I AR 27N80 14 14 A 25N80 13 13 A E AR T C= 25°C30 30 mJ dv/dt I S£ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 5 V/ns T J £ 150°C, RG = 2 W P D T C = 25 °C 500 520 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C T L 1.6 mm (0.063 in) from case for 10 s 300 - °C V ISOL 50/60 Hz, RMS t = 1 min - 2500 V~ I ISOL £ 1 mA t = 1 s - 3000 V~ M d Mounting torque 0.9/6 1.5/13 Nm/lb.in. Terminal connection torque - 1.5/13 Nm/lb.in. Weight 10 30 g HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr 95561C (3/98) V DSS I D25 R DS(on) IXFK 27N80 800 V 27 A 0.30 W IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W IXYS reserves the right to change limits, test conditions, and dimensions. |
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