1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TMOS FET Transistor

N–Channel — Enhancement

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain Source Voltage

VDSS

60

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–Source Voltage

— Continuous

— Non–repetitive (tp ≤ 50 µs)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current

Continuous

Pulsed

ID

IDM

200

500

mAdc

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

357

°C/W

Maximum Lead Temperature for

Soldering Purposes, 1/16

″ from case

for 10 seconds

TL

300

°C

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)

V(BR)DSS

60

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0)

(VDS = 48 Vdc, VGS = 0, TJ = 125°C)

IDSS

—

—

1.0

1.0

µAdc

mAdc

Gate–Body Leakage Current, Forward

(VGSF = 15 Vdc, VDS = 0)

IGSSF

—

–10

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

3.0

Vdc

Static Drain–Source On–Resistance

(VGS = 10 Vdc, ID = 0.5 Adc)

(VGS = 4.5 Vdc, ID = 75 mAdc)

rDS(on)

—

—

5.0

6.0

Ohm

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 0.5 Adc)

(VGS = 4.5 Vdc, ID = 75 mAdc)

VDS(on)

—

—

2.5

0.45

Vdc

1. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N7000/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1997

CASE 29–04, STYLE 22

TO–92 (TO–226AA)

1

2

3

2N7000

Motorola Preferred Device

3 DRAIN

2

GATE

1 SOURCE

REV 3