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RFMA0912-1W-Q7 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA0912-1W-Q7 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
1 / 4 page RFMA0912-1W-Q7 UPDATED: 04/24/2008 9.50 – 11.70 GHz High-Gain Surface Mounted PA Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 4 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised May 2008 FEATURES • 9.50 – 11.70GHz Operating Frequency Range • 30dBm Output Power @1dB Compression • 30dB Typical Power Gain @1dB Compression • -41dBc OIMD3 @Pout = 20dBm/tone • 7X7mm QFN Package APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems ELECTRICAL CHARACTERISTICS (TB=25 °C) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 9.50 11.70 GHz P1dB Output Power @1dB Gain Compression 29.0 30.0 dBm G1dB Gain @1dB Gain Compression 27.5 30.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Pout = 20dBm/tone -41 -38 dBc Input RL Input Return Loss -10 dB Output RL Output Return Loss -6 dB ID1 Drain Current 1 180 220 mA ID2 Drain Current 1 800 1100 mA VD1, VD2 Drain Voltage 7 8 V VG1, VG2 Gate Voltage -2.5 -0.3 V Rth Thermal Resistance 2 9 oC/W Tb Operating Base Plate Temperature -30 +80 oC 1. Recommended to bias each amplifier stage separately using a gate voltage range, starting from -2.5 to -0.3V to achieve typical current levels. 2. Measured result when used with Excelics recommended evaluation board. MAXIMUM RATINGS AT 25°C 3,4 SYMBOL CHARACTERISTIC ABSOLUTE CONTINOUS VD1, VD2 Drain to Source Voltage 12V 8 V VG1, VG2 Gate to Source Voltage -5V -2.5 V ID1, ID2 Drain Current Idss 220, 1100mA PIN Input Power 20dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 15.0W 12.6W 3. Operation beyond absolute or continuous ratings may result in permanent damage or reduction of MTTF respectively. 4. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –TB)/RTH; where TB = Temperature of Base Plate |
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