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Dated : 27/12/2007
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BC546…BC550
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier application
These transistors are subdivided into three groups A,
B and C according to their current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC546
BC547, BC550
BC548, BC549
VCBO
80
50
30
V
Collector Emitter Voltage
BC546
BC547, BC550
BC548, BC549
VCEO
65
45
30
V
Emitter Base Voltage
VEBO
6
V
Collector Current (DC)
IC
100
mA
Peak Collector Current
ICM
200
mA
Total Power Dissipation
Ptot
500
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group
A
B
C
hFE
hFE
hFE
110
200
420
220
450
800
-
-
-
Collector Base Cutoff Current
at VCB = 30 V
ICBO
-
15
nA
Emitter Base Cutoff Current
at VEB = 5 V
IEBO
-
100
nA
Collector Base Breakdown Voltage
at IC = 100 µA
BC546
BC547, BC550
BC548, BC549
V(BR)CBO
80
50
30
-
-
-
V
Collector Emitter Breakdown Voltage
at IC = 1 mA
BC546
BC547, BC550
BC548, BC549
V(BR)CEO
65
45
30
-
-
-
V
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
6
-
V
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
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