1 / 2 page
Dated : 10/10/2008
®
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
BAS16
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
Continuous Forward Current
IF
215
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Surge Current
t = 1 µs
t = 1 ms
t = 1 s
IFSM
4
1
0.5
A
Power Dissipation
Ptot
250
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
Ts
- 65 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA
VF
VF
VF
VF
-
-
-
-
715
855
1
1.25
mV
mV
V
V
Reverse Current
at VR = 25 V
at VR = 75 V
at VR = 25 V, TJ = 150 OC
at VR = 75 V, TJ = 150 OC
IR
IR
IR
IR
-
-
-
30
1
30
50
nA
µA
µA
µA
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
75
-
V
Diode Capacitance
at f = 1 MHz
Cd
-
2
pF
Reverse Recovery Time
at IF = IR = 10 mA, RL = 50 Ω
trr
-
4
ns
1
3
2
Marking Code: 5D
SOT-23 Plastic Package
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
